AUIRS21811S
Parameter Temperature Trends
Figures 4-16 provide information on the experimental performance of the AUIRS21811S HVIC. The line
plotted in each figure is generated from actual lab data. A large number of individual samples were tested at
three temperatures (-40 oC, 25 oC, and 125 oC) in order to generate the curves. Each line in the graphs
consist of three data points (one data point at each of the tested temperatures) that have been connected
together to illustrate the understood trend. The individual data points on the curve were determined by
calculating the averaged experimental value of the parameter (for a given temperature).
210
185
160
210
185
160
135
M ax.
135
M ax.
110
Typ.
M in.
-50
-25
0
25
50
75
100
125
110
Typ .
M in.
-50
-25
0
25
50
75
100
125
Temperature ( C)
Temperature ( C)
24
21
o
Figure 4. Turn-On Propagation Delay
vs. Temperature
17
15
o
Figure 5. Turn-Off Propagation Delay vs.
Temperature
18
M ax.
13
M ax.
Typ.
15
M in.
11
Typ.
12
-50
-25
0
25
50
75
100
125
9
M in.
-50
-25
0
25
50
75
100
125
Temperature ( C)
www.irf.com
o
Figure 6. Turn-On Rise Time vs.
Temperature
11
Temperature ( o C)
Figure 7. Turn-Off Fall Time vs.
Temperature
? 2009 International Rectifier
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相关代理商/技术参数
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AUIRS21814S 功能描述:功率驱动器IC High Low Side DRVR 600V 160ns 1.9A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
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